Direct Synthesis of Semiconducting Single‐Walled Carbon Nanotubes Toward High‐Performance Electronics

The large-scale synthesis of high-purity semiconducting single-walled carbon nanotubes (s-SWCNTs) plays a crucial role in fabricating high-performance and multiapplication-scenario electronics. This work develops straightforward, continuous, scalable method to synthesize individual s-SWCNTs with small-diameters distribution (≈1 nm). It is believed that the water dioxide resulting from decomposition isopropanol act as oxidizing agents selectively etch metallic SWCNTs, hence enhancing production s-SWCNTs. performance individual-SWCNTs field effect transistors confirms high abundance s-SWCNTs, presenting mean mobility 376 cm2 V−1 s−1 2725 an on-current off-current (Ion/Ioff) ratio 2.51 × 107. Moreover, thin-film based on as-synthesized SWCNTs exhibit excellent 9.3 Ion/Ioff 1.3× 105, respectively, verifying enrichment presents simple feasible route for sustainable high-quality electronic devices.